STMicroelectronics to acquire majority stake in Gallium Nitride innovator Exagan

  • Industry News
  • Mar 06,20
The acquisition will accelerate ST’s GaN expertise, roadmap and business for high-frequency, high-power automotive, industrial and consumer applications.
STMicroelectronics to acquire majority stake in Gallium Nitride innovator Exagan

STMicroelectronics, a global semiconductor leader across the spectrum of electronics applications, has announced that it has signed an agreement to acquire a majority stake in French Gallium Nitride (GaN) innovator Exagan. Exagan’s expertise in epitaxy, product development and application know-how will broaden and accelerate company’s power GaN roadmap and business for automotive, industrial and consumer applications. Exagan will continue to execute its product roadmap and will be supported by ST in the deployment of its products.

The signed agreement also provides for the acquisition by STMicroelectronics’s of the remaining minority stake in Exagan 24 months after the closing of the acquisition of the majority stake. The transaction is funded with available cash.

“ST has built strong momentum in silicon carbide and is now expanding in another very promising compound material, gallium nitride, to drive adoption of the power products based on GaN by customers across the automotive, industrial and consumer markets” said Jean-Marc Chery, President and CEO of STMicroelectronics. 

“The acquisition of a majority stake in Exagan is another step forward in strengthening our global technology leadership in power semiconductors and our long-term GaN roadmap, ecosystem and business. It comes in addition to ongoing developments with CEA-Leti in Tours, France, and the recently-announced collaboration with TSMC,” added Chery.

Gallium Nitride (GaN) belongs to the family of wide band gap (WBG) materials which include Silicon Carbide. GaN-based devices represent a major step forward in power electronics providing high-frequency operation, with increased efficiency and higher power density compared to silicon-based transistors, leading to power savings and total system downsizing. GaN products will address a wide variety of applications such as power factor correction and DC/DC converters in servers, telecom and industrial applications, on-board chargers for EV and DC-DC converters for automotive applications, as well personal electronics applications like power adaptors.

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