ST’s HB2 650V IGBTs boost performance with latest TFS technology
The new HB2 series has outstanding conduction performance thanks to low VCEsat of 1.55V
The STMicroelectronics HB2 650V IGBT series delivers efficiency and performance gains for medium- and high-speed applications such as PFC converters, welders, uninterrupted power supplies (UPS) and solar inverters, leveraging ST’s latest Trench Field Stop (TFS) technology. The series also includes automotive-eligible devices meeting AEC-Q101 Rev. D.
Joining the STPOWER portfolio, the new HB2 series has outstanding conduction performance thanks to low VCEsat of 1.55V. At the same time, dynamic behaviour is enhanced due to reduced gate charge that enables fast switching at low gate current. Outstanding thermal performance helps maximise reliability and power density, while the new products are also positioned as a very competitive choice in the market.
The HB2 series IGBTs can be specified with either a full-rated or half-rated diode, or a protection diode to prevent accidental reverse bias, giving extra freedom to optimise the behaviour for specific application needs.
The first of the new 650V devices, the 40A STGWA40HP65FB2, is available now in the TO-247 long-lead package, priced from $2.95 for orders of 1000 pieces.